Effect of diameter variation in a large set of carbon nanotube transistors

被引：55

作者：

Tseng, Yu-Chih ^{[1
]}

Phoa, Kinyip ^{[1
]}

Carlton, David ^{[1
]}

Bokor, Jeffrey ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 07期

关键词：

D O I：

10.1021/nl060305x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A study involving a large number of carbon nanotube transistors reveals that the nanotube diameter and the metal contact material play key roles in determining the on- and off-state currents of these devices. The results are discussed in terms of the Schottky barrier at the metal-semiconductor junction and the variation of this barrier relative to the alignment of energy levels between the carbon nanotube and the metal.

引用

页码：1364 / 1368

页数：5

共 20 条

[1]

[Anonymous], 1986, CRC HDB CHEM PHYS, P1986

[2] Self-aligned carbon nanotube transistors with charge transfer doping [J].

Chen, J ;

Klinke, C ;

Afzali, A ;

Avouris, P .

APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3

[3] The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors [J].

Chen, ZH ;

Appenzeller, J ;

Knoch, J ;

Lin, YM ;

Avouris, P .

NANO LETTERS, 2005, 5 (07) :1497-1502

[4] Controlling energy-level alignments at carbon nanotube/Au contacts [J].

Cui, XD ;

Freitag, M ;

Martel, R ;

Brus, L ;

Avouris, P .

NANO LETTERS, 2003, 3 (06) :783-787

[5] Controlling doping and carrier injection in carbon nanotube transistors [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2773-2775

[6] Extraordinary mobility in semiconducting carbon nanotubes [J].

Durkop, T ;

Getty, SA ;

Cobas, E ;

Fuhrer, MS .

NANO LETTERS, 2004, 4 (01) :35-39

[7] High-mobility nanotube transistor memory [J].

Fuhrer, MS ;

Kim, BM ;

Durkop, T ;

Brintlinger, T .

NANO LETTERS, 2002, 2 (07) :755-759

[8] HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].

IIJIMA, S .

NATURE, 1991, 354 (6348) :56-58

[9] High performance n-type carbon nanotube field-effect transistors with chemically doped contacts [J].

Javey, A ;

Tu, R ;

Farmer, DB ;

Guo, J ;

Gordon, RG ;

Dai, HJ .

NANO LETTERS, 2005, 5 (02) :345-348

[10] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

← 1 2 →