Metal-insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

被引:31
作者
Capon, F [1 ]
Laffez, P [1 ]
Bardeau, JF [1 ]
Simon, P [1 ]
Lacorre, P [1 ]
Zaghrioui, M [1 ]
机构
[1] Univ Maine, Lab Phys Etat Condense, F-72085 Le Mans, France
关键词
D O I
10.1063/1.1493645
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nd0.7Eu0.3NiO3 thin films are deposited by rf sputtering and subsequent oxygen pressure annealing on (100) oriented silicon substrate. We characterize the thermochromic properties of films by measuring electrical transition, infrared transmittance, and reflectance. The thermochromic effect at room temperature is observed. Resistivity measurements exhibit a sharper hysteresis loop than is usually observed in NdNiO3 thin films. Infrared properties in the 8-14 mum wavelength range spectra reveal a contrast of 30% in reflectance and 55% in transmittance. (C) 2002 American Institute of Physics.
引用
收藏
页码:619 / 621
页数:3
相关论文
共 23 条
[1]   PREPARATION, CRYSTAL-STRUCTURE, AND METAL-TO-INSULATOR TRANSITION OF EUNIO3 [J].
ALONSO, JA ;
MARTINEZLOPE, MJ ;
RASINES, I .
JOURNAL OF SOLID STATE CHEMISTRY, 1995, 120 (01) :170-174
[2]  
Baran E.J., 1990, Catal. Today, V8, P133, DOI [10.1016/0920-5861(90)87015-U, DOI 10.1016/0920-5861(90)87015-U]
[3]   Microstructure and metal-insulating transition of VO2 thin films [J].
Béteille, F ;
Mazerolles, L ;
Livage, J .
MATERIALS RESEARCH BULLETIN, 1999, 34 (14-15) :2177-2184
[4]   Transport properties of NdNiO3 thin films made by pulsed-laser deposition [J].
Catalan, G ;
Bowman, RM ;
Gregg, JM .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :606-608
[5]   Optical switching in thin film NdNiO3 [J].
DeNatale, JF ;
Kobrin, PH .
MATERIALS FOR OPTICAL LIMITING II, 1997, 479 :145-152
[6]   TUNING OF METAL-INSULATOR-TRANSITION AROUND ROOM-TEMPERATURE OF PEROVSKITES SM1-XNDXNIO3 [J].
FRAND, G ;
BOHNKE, O ;
LACORRE, P ;
FOURQUET, JL ;
CARRE, A ;
EID, B ;
THEOBALD, JG ;
GIRE, A .
JOURNAL OF SOLID STATE CHEMISTRY, 1995, 120 (01) :157-163
[7]   NEUTRON-DIFFRACTION STUDY OF RNIO3 (R = LA,PR,ND,SM) - ELECTRONICALLY INDUCED STRUCTURAL-CHANGES ACROSS THE METAL-INSULATOR-TRANSITION [J].
GARCIAMUNOZ, JL ;
RODRIGUEZCARVAJAL, J ;
LACORRE, P ;
TORRANCE, JB .
PHYSICAL REVIEW B, 1992, 46 (08) :4414-4425
[8]   A new technique to assess electrical behaviour by microwave measurements, application to Perovskites RNiO(3) (R=Nd, Sm) [J].
Gire, A ;
Jouffroy, M ;
Theobald, JG ;
Bohnke, O ;
Frand, G ;
Lacorre, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1997, 58 (04) :577-586
[9]   METALLIC STATE AND THE METAL-INSULATOR-TRANSITION OF NDNIO3 [J].
GRANADOS, X ;
FONTCUBERTA, J ;
OBRADORS, X ;
MANOSA, L ;
TORRANCE, JB .
PHYSICAL REVIEW B, 1993, 48 (16) :11666-11672
[10]   Physical properties of SIO2 thin films obtained by anodic oxidation [J].
Grecea, M ;
Rotaru, C ;
Nastase, N ;
Craciun, C .
JOURNAL OF MOLECULAR STRUCTURE, 1999, 481 :607-610