Theoretical comparative study of negatively and positively charged excitons in GaAs/Ga1-xAlxAs semiconductor quantum wells

被引：17

作者：

Stébé, B ^{[1
]}

Moradi, A ^{[1
]}

Dujardin, F ^{[1
]}

机构：

[1] Univ Metz, Inst Phys & Elect, F-57078 Metz 3, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.61.7231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We compare: the binding energies of the singlet ground states of negatively and positively charged excitons in a GaAs/Ga1-xAlxAs semiconductor quantum well. We found that the binding energies are very close, contrary to what happens in three-dimensional and two-dimensional semiconductors where the positively charged exciton is always more stable than the negatively charged exciton. This result is in agreement with recent experimental observations.

引用

页码：7231 / 7232

页数：2

共 7 条

[1] Comparative study of the negatively and positively charged excitons in GaAs quantum wells [J].