Excitation frequency effects on large-area hydrogenated amorphous silicon film deposition process using flexible film substrate

Plasma excitation frequency effects on deposited hydrogenated amorphous silicon (a-Si:H) film properties were examined using a large-scale roll-to-roll deposition technique named the "Stepping-Roll" apparatus with flexible film substrates. Excitation frequency was varied from 13.6 MHz to 30 MHz while keeping the film thickness uniform and at a practical level. Increasing the excitation frequency modifies both Si-Si network distortion and Si-H bonding configuration in a deposition rate region from 5 nm/min to 25 nm/min.