Effects of nitrogen on the band structure of GaNxP1-x alloys

被引：135

作者：

Xin, HP ^{[1
]}

Tu, CW

Zhang, Y

Mascarenhas, A

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.126005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that the incorporation of N in GaNxP1-x alloys (x greater than or equal to 0.43%) leads to a direct band-gap behavior of GaNP. For N concentration lower than 0.43%, a series of sharp emission lines from the various N pair centers are observed for GaNP bulk layers. With increasing N concentration higher than 0.43%, a strong photoluminescence (PL) emission from GaNP bulk layers is observed at room temperature. While the PL peak redshifts with increasing N concentration to 3.1%, the PL intensity remains as intense. Absorption measurements show a direct band-gap behavior of GaNP alloys. (C) 2000 American Institute of Physics. [S0003-6951(00)03510-5].

引用

页码：1267 / 1269

页数：3

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