Fabrication of high quality silicon-polyaniline heterojunctions

被引：44

作者：

Laranjeira, JMG

Khoury, HJ

de Azevedo, WM

da Silva, EF

de Vasconcelos, EA

机构：

[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

[2] Univ Fed Pernambuco, Dept Nucl Energy, BR-50740540 Recife, PE, Brazil

[3] Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil

来源：

APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期

关键词：

heterojunction; silicon; polyaniline; sensor; electrical properties;

D O I：

10.1016/S0169-4332(01)00901-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high quality silicon-polyaniline heterojunction is produced by spin-coating of soluble polyaniline on silicon substrates. The devices have excellent reproducibility of their electrical characteristics and high rectification ratio. The rectification ratio is 60,000 at +/-1.0 V at room temperature, and typical reverse current at - 1.0 V is 3 nA. A G/I x G plot is used to analyze the current-voltage characteristics, yielding typical series resistance of 4 kOmega and ideality factor in a range from 1.0 to 2.0. The devices present great potential for use as radiation and/or gas sensors. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：390 / 394

页数：5

共 16 条

[1] LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS [J].