Direct Observation of Doping Sites in Temperature-Controlled, p-Doped P3HT Thin Films by Conducting Atomic Force Microscopy

被引：92

作者：

Duong, Duc T. ^{[1
]}

Hung Phan ^{[2
]}

Hanifi, David ^{[1
]}

Jo, Pil Sung ^{[1
]}

Thuc-Quyen Nguyen ^{[2
,3
]}

Salleo, Alberto ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Dept Chem & Biochem, Santa Barbara, CA 93106 USA

[3] King Abdulaziz Univ, Fac Sci, Dept Chem, Jeddah, Saudi Arabia

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 35期

基金：

美国国家科学基金会;

关键词：

POLYMER/FULLERENE SOLAR-CELLS; CHARGE-TRANSFER; ORGANIC SEMICONDUCTORS; CONJUGATED POLYMERS; TRANSPORT; DOPANT; LAYER;

D O I：

10.1002/adma.201402015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The distribution of dopant sites in doped poly(3-hexylthiophene) (P3HT) thin films is characterized using optical absorption, grazing-incidence X-ray diffraction, and conducting atomic force microscopy (c-AFM). It is shown that dopant sites can be directly observed using c-AFM and that the solution temperature dramatically impacts phase separation and conductivity in spin-cast films.

引用

页码：6069 / +

页数：6

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