Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes

被引：18

作者：

Li, QH ^{[1
]}

Chen, YJ ^{[1
]}

Wan, Q ^{[1
]}

Wang, TH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1789232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film transistors are fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes. A linear correlation in the output characteristics is observed at zero gate voltage, indicating Ohmic contacts between the nanobelts and the electrodes. The transistors exhibit n-type behaviors and have a mobility of 1.85 cm(2)/V s with a current on/off ratio above 10(3). The conductance increases as the pressure in the device chamber is reduced, which indicates that the transistors are promising for oxygen detecting. (C) 2004 American Institute of Physics.

引用

页码：1805 / 1807

页数：3

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