Interfacial conduction in silica gels containing nanocrystalline copper oxide

被引：28

作者：

Das, D ^{[1
]}

Chakravorty, D

机构：

[1] Indian Assoc Cultivat Sci, Calcutta 700032, W Bengal, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.126006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer-sized copper particles have been grown within a gel derived glass in the system 60 CuO, 40 SiO2 (mole %). By heat treatment at temperatures in the range of 450-850 degrees C, copper oxide shells of thickness varying from 1.1 to 1.7 nm have been produced. DC resistivity measurements carried out over the temperature range of 30-300 degrees C show a drastically reduced activation energy as compared to that of a reference sample with the above composition. This is ascribed to the presence of an interfacial amorphous phase generated by the assembly of nanosized copper oxide particles. (C) 2000 American Institute of Physics. [S0003-6951(00)04210-8].

引用

页码：1273 / 1275

页数：3

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