Thermal stability of Si3N4/Si/GaAs interfaces

被引：12

作者：

Park, DG

Chen, Z

Diatezua, DM

Wang, Z

Rockett, A

Morkoc, H

Alterovitz, SA

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

[3] USAF,WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.118547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An investigation on the thermally induced interface degradation of Si3N4/Si/p-GaAs metal-insulator-semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si3N4/Si/p-GaAs MIS capacitor as determined by capacitance-voltage and conductance loss measurements was about 8x10(10) eV(-1) cm cm(-2) near GaAs midgap after rapid thermal annealing at 550 degrees C in N-2. However, this density increased to 5x10(11) eV(-1) cm(-2) after annealing at 750 degrees C in N-2. The underlying mechanisms responsible for this degradation are described. (C) 1997 American Institute of Physics.

引用

页码：1263 / 1265

页数：3

共 13 条

[11] UNPINNED GAAS MOS CAPACITORS AND TRANSISTORS [J].