Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

被引:932
作者
Furchi, Marco M. [1 ]
Pospischil, Andreas [1 ]
Libisch, Florian [2 ]
Burgdoerfer, Joachim [2 ]
Mueller, Thomas [1 ]
机构
[1] Vienna Univ Technol, Inst Photon, Gusshausstr 27-29, A-1040 Vienna, Austria
[2] Vienna Univ Technol, Inst Theoret Phys, A-1040 Vienna, Austria
基金
奥地利科学基金会;
关键词
2D materials; transition-metal dichalcogenides; van der Waals heterostructures; photovoltaics; FIELD-EFFECT TRANSISTORS; MONOLAYER MOS2; HETEROSTRUCTURES; PHOTOLUMINESCENCE; ABSORPTION; EMISSION; DIODES;
D O I
10.1021/nl501962c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a typeII van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology.
引用
收藏
页码:4785 / 4791
页数:7
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