Dielectric constants of Zr silicates: A first-principles study

被引:66
作者
Rignanese, GM
Detraux, F
Gonze, X
Bongiorno, A
Pasquarello, A
机构
[1] Univ Catholique Louvain, Unite Physicochim & Phys Mat, B-1348 Louvain, Belgium
[2] Univ Catholique Louvain, Res Ctr Microscop & Nanoscop Mat & Elect Devices, B-1348 Louvain, Belgium
[3] Ecole Polytech Fed Lausanne, Inst Theorie Phenomenes Phys, CH-1015 Lausanne, Switzerland
[4] Inst Romand Rech Numer Phys Mat, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1103/PhysRevLett.89.117601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using density-functional theory, we compute the optical and static dielectric constants for a set of Zr silicates modeled by various SiO2 crystals, with Zr atoms substitutional to Si, and by an amorphous structure. We then derive a microscopic scheme that relates the dielectric constants to structural units centered on Si and Zr atoms through the definition of characteristic parameters. Applied to amorphous (ZrO2)(x)(SiO2)(1-x), these schemes describe the observed dependence of the dielectric constants on the Zr concentration and highlight the role of ZrO6 units.
引用
收藏
页码:1 / 117601
页数:4
相关论文
共 16 条
[1]   Modeling the structure of zircon (ZrSiO4):: empirical potentials, ab initio electronic structure [J].
Crocombette, JP ;
Ghaleb, D .
JOURNAL OF NUCLEAR MATERIALS, 1998, 257 (03) :282-286
[2]   Role of bond coordination and molecular volume on the dielectric constant of mixed-oxide compounds [J].
Kurtz, HA ;
Devine, RAB .
APPLIED PHYSICS LETTERS, 2001, 79 (15) :2342-2344
[3]   Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys [J].
Lucovsky, G ;
Rayner, GB .
APPLIED PHYSICS LETTERS, 2000, 77 (18) :2912-2914
[4]  
MISRA V, UNPUB
[5]   The electronic structure at the atomic scale of ultrathin gate oxides [J].
Muller, DA ;
Sorsch, T ;
Moccio, S ;
Baumann, FH ;
Evans-Lutterodt, K ;
Timp, G .
NATURE, 1999, 399 (6738) :758-761
[7]   Dynamical charge tensors and infrared spectrum of amorphous SiO2 [J].
Pasquarello, A ;
Car, R .
PHYSICAL REVIEW LETTERS, 1997, 79 (09) :1766-1769
[8]   Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application [J].
Qi, WJ ;
Nieh, R ;
Dharmarajan, E ;
Lee, BH ;
Jeon, Y ;
Kang, LG ;
Onishi, K ;
Lee, JC .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1704-1706
[9]   First-principles study of structural, electronic, dynamical, and dielectric properties of zircon [J].
Rignanese, GM ;
Gonze, X ;
Pasquarello, A .
PHYSICAL REVIEW B, 2001, 63 (10) :7
[10]   The end of the road for silicon? [J].
Schulz, M .
NATURE, 1999, 399 (6738) :729-730