Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

被引：101

作者：

Qi, WJ ^{[1
]}

Nieh, R ^{[1
]}

Dharmarajan, E ^{[1
]}

Lee, BH ^{[1
]}

Jeon, Y ^{[1
]}

Kang, LG ^{[1
]}

Onishi, K ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.1308535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zirconium silicate (ZrSixOy) films have been sputtered by comagnetron-reactive sputtering. The composition of ZrSixOy has been controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective dielectric constants. The sputtered silicate layers showed low equivalent oxide thickness of 14.5 Angstrom with a low leakage of 3.3x10(-3) A/cm(2) at -1.5 V relative to flat band voltage. The silicate films also exhibited good high-temperature stability and smooth interfacial properties on silicon substrate. (C) 2000 American Institute of Physics. [S0003-6951(00)01337-1].

引用

页码：1704 / 1706

页数：3

共 9 条

[1] BLUMENTHAL WB, 1958, CHEM BEHAV ZIRCONIUM, P201
[2] Byoung Hun Lee, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P133, DOI 10.1109/IEDM.1999.823863
[3] Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
Henson, WK
Ahmed, KZ
Vogel, EM
Hauser, JR
Wortman, JJ
Venables, RD
Xu, M
Venables, D
[J]. IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) : 179 - 181
[4] Ultra thin (<3nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing
Kim, BY
Luan, HF
Kwong, DL
[J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 463 - 466
[5] Qi W.J., 1999, Tech. Dig. IEDM, P145
[6] REACTIVE MAGNETRON SPUTTERED ZIRCONIUM-OXIDE AND ZIRCONIUM SILICON-OXIDE THIN-FILMS
RUSSAK, MA
JAHNES, CV
KATZ, EP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1248 - 1253
[7] Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Wilk, GD
Wallace, RM
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2854 - 2856
[8] Stable zirconium silicate gate dielectrics deposited directly on silicon
Wilk, GD
Wallace, RM
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (01) : 112 - 114
[9] Hafnium and zirconium silicates for advanced gate dielectrics
Wilk, GD
Wallace, RM
Anthony, JM
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 484 - 492

← 1 →