Organic thin-film transistors based on anthracene oligomers

被引:41
作者
Inoue, Y [1 ]
Tokito, S
Ito, K
Suzuki, T
机构
[1] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan
关键词
D O I
10.1063/1.1707206
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic thin-film transistors (OTFTs)-with an active layer based on the organic semiconducting anthracene oligomers, 2,2(')-bianthracene (2A), 2,6-trianthracene (3A), and their dihexyl derivatives (DH-2A and DH-3A)-were fabricated. It was found that thin films of anthracene oligomers deposited by thermal evaporation had lamellar structures with a high degree of molecular ordering. Consequently, the OTFTs based on anthracene oligomers showed high field-effect mobilities. The mobility of the OTFTs was increased by the oligomerization and the substitution of alkyl groups. DH-2A on a SiO2/Si substrate showed the highest mobility of 0.13 cm(2)/V s. It was also found that the electrical characteristics of the OTFTs were improved by using a Ta2O5 gate insulator. (C) 2004 American Institute of Physics.
引用
收藏
页码:5795 / 5799
页数:5
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