Deposition of smooth Cu(In,Ga)Se2 films from binary multilayers

被引：67

作者：

Hermann, AM ^{[1
]}

Mansour, M

Badri, V

Pinkhasov, B

Gonzales, C

Fickett, F

Calixto, ME

Sebastian, PJ

Marshall, CH

Gillespie, TJ

机构：

[1] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[2] NIST, Mat Sci & Engn Lab, Boulder, CO 80303 USA

[3] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

[4] Lockheed Martin Astronaut, Denver, CO 80201 USA

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

electrodeposition; copper-indium-selenide; multilayers; thin films; sputtering; stoichiometry;

D O I：

10.1016/S0040-6090(99)00848-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film photovoltaic devices based on CuInSe2 (CIS) prepared by vacuum deposition have shown efficiencies greater than 17%. However, inexpensive large-area uniform-thickness photovoltaic devices are likely to require non-vacuum deposition techniques. We discuss in this paper electrodeposition of CIS films using multilayers of binary selenides and, post-deposition selenization and thermal annealing. A sequential electrodeposition of Cu/In2Se3/Cu2-xSe on Mo-on-glass substrates was done potentiostatically at varying potentials, pH and deposition rime. We have obtained crystalline chalcopyrite CuInSe2 films with phase content greater than 95%. The surface of the films is specularly reflecting. We also present here a study of sputtered CIGS films using multilayers of binary selenides, and one-step electrodeposition of CIS films. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：74 / 78

页数：5

共 8 条

[1] 14.1% CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors [J].