Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure

被引：180

作者：

Huang, M. L.

Chang, Y. C.

Chang, C. H.

Lin, T. D.

Kwo, J.

Wu, T. B.

Hong, M. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30012, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30012, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.2218826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence-band offset has been determined to be 3.83 +/- 0.05 eV at the atomic-layer-deposition Al2O3/InGaAs interface by x-ray photoelectron spectroscopy. The Au-Al2O3/InGaAs metal-oxide-semiconductor diode exhibits current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, a conduction-band offset of 1.6 +/- 0.1 eV at the Al2O3-InGaAs interface and an electron effective mass similar to 0.28 +/- 0.04m(0) of the Al2O3 layer have been extracted. Consequently, combining the valence-band offset, the conduction-band offset, and the energy-band gap of the InGaAs, the energy-band gap of the atomic-layer-deposited Al2O3 is 6.65 +/- 0.11 eV. (c) 2006 American Institute of Physics.

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页数：3

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