SiC-seeded crystal growth

被引：58

作者：

Glass, RC

Henshall, D

Tsvetkov, VF

Carter, CH

机构：

来源：

MRS BULLETIN | 1997年 / 22卷 / 03期

关键词：

D O I：

10.1557/S0883769400032735

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：30 / 35

页数：6

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