Aluminum-induced crystallization of amorphous silicon

被引：107

作者：

Gall, S ^{[1
]}

Muske, M ^{[1
]}

Sieber, I ^{[1
]}

Nast, O ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01108-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the aluminum-induced crystallization of amorphous silicon (a-Si) during the aluminum-induced layer exchange (ALILE) process, in which a stack of glass/Al/a-Si is transformed into a glass/polycrystalline silicon (poly-Si)/Al(Si) structure by an annealing step well below the eutectic temperature of the Al/Si system. Our experiments resulted in continuous large-grained poly-Si films on glass substrates. The nucleation and the growth of the crystalline phase during the ALILE process was observed using an optical microscope. We found an activation energy of 1.8 eV for the nucleation process and we related this energy to a large barrier at the a-Si/Al interface. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：741 / 745

页数：5

共 10 条

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[2]

Herd S. R., 1972, Journal of Non-Crystalline Solids, V7, P309, DOI 10.1016/0022-3093(72)90267-0

[3] PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS [J].