Preparation of trichlorosilane by plasma hydrogenation of silicon tetrachloride

被引：46

作者：

Gusev, A. V. ^{[1
]}

Kornev, R. A. ^{[1
]}

Sukhanov, A. Yu. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Chem High Pur Substances, Nizhnii Novgorod 603950, Russia

来源：

INORGANIC MATERIALS | 2006年 / 42卷 / 09期

关键词：

Hydrogen Molecule; Plasma Hydrogenation; Discharge Zone; Radiation Heat Loss; Trichlorosilane;

D O I：

10.1134/S0020168506090172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied silicon tetrachloride hydrogenation in an rf (40.68 MHz) plasma and have determined the trichlorosilane yield as a function of the molar energy input, H-2 : SiCl4 molar ratio, and pressure. The highest trichlorosilane yield achieved is 60%, and the minimum energy input is 0.3 kW h per mole of SiHCl3.

引用

页码：1023 / 1026

页数：4