Transient pressure induced by laser ablation of liquid toluene: toward the understanding of laser-induced backside wet etching

被引:40
作者
Kawaguchi, Y [1 ]
Ding, X [1 ]
Narazaki, A [1 ]
Sato, T [1 ]
Niino, H [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Photoreact Control Res Ctr, Tsukuba, Ibaraki 3058565, Japan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期
关键词
D O I
10.1007/s00339-004-2580-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To clarify the initial stage of laser-induced backside wet etching, we directly measured transient pressure upon laser ablation of toluene under KrF excimer laser irradiation by using a fast-response pressure gauge. The propagation time of the pressure peak to the gauge agreed well with the time for the shock wave to reach the gauge on time-resolved images. The peak pressure P decreased slowly with increasing distance d: P=30.4 MPa for d=100 mum to P=11.1 MPa for d=1000 mum at a fluence F=1.0 J cm(-2) pulse(-1). The initial pressure, estimated to be of the order of 10-200 MPa, impinges on a transparent plate and contributes to the etching.
引用
收藏
页码:883 / 885
页数:3
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