He-induced cavity formation in silicon upon high-temperature implantation

被引：17

作者：

Fichtner, PFP

Peeva, A

Behar, M

Azevedo, GD

Maltez, RL

Koegler, R

Skorupa, W

机构：

[1] Univ Fed Rio Grande Sul, Dept Met, BR-91501970 Porto Alegre, RS, Brazil

[2] FWIM, Res Ctr Rossendorf, D-01314 Dresden, Germany

[3] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

defects; voids; ion implantation; radiation effects; helium; silicon;

D O I：

10.1016/S0168-583X(99)00888-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

40 keV He+ ions were implanted into (1 0 0) oriented Si single crystals to a fluence of 9 x 10(15) cm(-2) at room-temperature or 350 degrees C. The implantations were performed at both. random or (0 0 1) Si channel directions. The implantation damage and the in situ annealing effects during the He implantations were investigated by transmission electron microscopy (TEM), Rutherford backscattering/channeling spectrometry (RBS/C) and elastic recoil detection analysis (ERDA). Significant differences in the microstructure evolution between the 350 degrees C and the room-temperature implanted and subsequently annealed at 350 degrees C samples were observed. The results are discussed in terms of a distinct Me bubble nucleation process. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：1038 / 1042

页数：5

相关论文

共 16 条

[1] Application of hydrogen ion beams to Silicon On Insulator material technology [J].

Bruel, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (03) :313-319

[2] Evolution of helium platelets and associated dislocation loops in α-SiC [J].

Chen, J ;

Jung, P ;

Trinkaus, H .

PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2709-2712

[3]

Chu W., 1978, BACKSCATTERING SPECT, DOI DOI 10.1016/B978-0-12-173850-1.50008-9

[4] Helium-implanted silicon: A study of bubble precursors [J].

Corni, F ;

Calzolari, G ;

Frabboni, S ;

Nobili, C ;

Ottaviani, G ;

Tonini, R ;

Cerofolini, GF ;

Leone, D ;

Servidori, M ;

Brusa, RS ;

Karwasz, GP ;

Tiengo, N ;

Zecca, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1401-1408

[5] Electronic stopping power of (100) axial-channelled He ions in Si crystals [J].

dosSantos, JHR ;

Grande, PL ;

Boudinov, H ;

Behar, M ;

Stoll, R ;

Klatt, C ;

Kalbitzer, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) :51-54

[6] Overpressurized bubbles versus voids formed in helium implanted and annealed silicon [J].

Fichtner, PFP ;

Kaschny, JR ;

Yankov, RA ;

Mucklich, A ;

Kreissig, U ;

Skorupa, W .

APPLIED PHYSICS LETTERS, 1997, 70 (06) :732-734

[7] Nucleation and growth of platelet bubble structures in He implanted silicon [J].

Fichtner, PFP ;

Kaschny, JR ;

Kling, A ;

Trinkaus, H ;

Yankov, RA ;

Mucklich, A ;

Skorupa, W ;

Zawislak, FC ;

Amaral, L ;

da Silva, MF ;

Soares, JC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :460-464

[8] The effects of the annealing temperature on the formation of helium-filled structures in silicon [J].

Fichtner, PFP ;

Kaschny, JR ;

Behar, M ;

Yankov, RA ;

Mücklich, A ;

Skorupa, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :329-333

[9] Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation [J].

Holländer, B ;

Mantl, S ;

Liedtke, R ;

Mesters, S ;

Herzog, HJ ;

Kibbel, H ;

Hackbarth, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :200-210

[10] Helium bubbles in silicon: Study of the residual helium content using elastic recoil detection analysis [J].

Kaschny, JR ;

Fichtner, PFP ;

Muecklich, A ;

Kreissig, U ;

Yankov, RA ;

Skorupa, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :583-586