Intrinsic Josephson effects in submicrometre Bi2212 mesas fabricated by using focused ion beam etching

被引:5
作者
Winkler, D
Mros, N
Tarte, EJ
Yurgens, A
Krasnov, VM
Foord, DT
Booij, WE
Blamire, MG
机构
[1] Chalmers Univ Technol, Dept Microelect & Nanosci, SE-41296 Gothenburg, Sweden
[2] Univ Cambridge, IRC Superconduct, Cambridge CB3 0HE, England
关键词
D O I
10.1088/0953-2048/12/11/395
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the current-voltage (I-V) characteristics of sub-mu m sized mesas made the surface of Bi2Sr2CaCu2O8 (Bi2212) single crystals. The mesas were fabricated using focused ion beam etching. The samples showed excellent I-V characteristics and their conductance-voltage (G-V) curves were measured from above the transition temperature down to 4.2 K. New ways of making annular mesas with diameters down to 0.5 mu m were also investigated.
引用
收藏
页码:1013 / 1015
页数:3
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