Frontier of transparent conductive oxide thin films

被引：158

作者：

Hosono, H ^{[1
]}

Ohta, H

Orita, M

Ueda, K

Hirano, M

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Japan Sci & Technol Corp, ERATO, Transparent ElectroAct Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

VACUUM | 2002年 / 66卷 / 3-4期

关键词：

transparent oxide conductors; p-n junction; UV-LED; ITO; Ga2O3; CuInO2;

D O I：

10.1016/S0042-207X(02)00165-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recent advancement of transparent conductive oxide thin films is reviewed using our strategy. Topics focused are the lowest resistive indium tin oxide films, deep-ultraviolet (deep-UV) transparent conductive oxides (TCO) thin film, p-n homo junction based on bipolar CuInO2, and UV-light emitting diode based on p-n hetero-junction. A frontier of transparent oxide semiconductors is opening as a consequence of discovery of p-type TCO. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：419 / 425

页数：7

共 21 条

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