UV-emitting diode composed of transparent oxide semiconductors:: p-SrCu2O2/n-ZnO

被引：41

作者：

Ohta, H

Kawamura, K

Orita, M

Sarukura, N

Hirano, M

Hosono, H

机构：

[1] ERATO, Japan Sci & Technol Corp, Hosono Project Transparent Electroact Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 11期

关键词：

D O I：

10.1049/el:20000726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A UV-emitting diode composed of a hetero-SrCu2O2/ZnO pit junction was fabricated by pulsed laser deposition (PLD). On injecting an electrical current through a pn heterojunction of p-SrCu2O2/n-ZnO, an emission peak centred at 387 nm was observed, originating from excitons or the electron hole plasma in ZnO.

引用

页码：984 / 985

页数：2

共 6 条

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