Characteristics of single crystal ZnO annealed in a ceramic ZnO box and its application for epitaxial growth of GaN

被引：26

作者：

Kobayashi, Atsushi

Ohta, Jitsuo

Fujioka, Hiroshi

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 07期

关键词：

ZnO; GaN; atomically flat surface; annealing; pulsed laser deposition;

D O I：

10.1143/JJAP.45.5724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found that the surfaces of ZnO(0001) annealed in a box made of ceramic ZnO exhibit atomically flat stepped and terraced structures. Structural and optical properties of ZnO are also improved by this annealing technique. Full width at half maximum of X-ray rocking curves of the ZnO substrates were decreased and green photoluminescence caused by defects were eliminated by the annealing. We have also found that epitaxial growth of GaN on atomically flat ZnO(0001) substrates at room temperature proceeds in a layer-by-layer mode, while growth on the as-received substrates results in formation of amorphous materials. These results indicate that the use of the annealing technique improves, not only crystal quality of ZnO substrates, but also morphology of the GaN films grown on them.

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页码：5724 / 5727

页数：4

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