Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition

被引：21

作者：

Ito, S ^{[1
]}

Fujioka, H ^{[1
]}

Ohta, J ^{[1
]}

Takahashi, H ^{[1
]}

Oshima, M ^{[1
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

来源：

THIN SOLID FILMS | 2003年 / 435卷 / 1-2期

关键词：

pulsed laser deposition (PLD); AlN; MnO; hetero-epitaxial growth;

D O I：

10.1016/S0040-6090(03)00359-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown AlN on MnO (111) substrates with pulsed laser deposition (PLD) and characterized their structural properties using various techniques. We have found that hexagonal AlN successfully grows epitaxially on MnO with the use of PLD. Grazing incidence-angle X-ray diffraction (GIXD) measurements have revealed that the epitaxial relationship between MnO and AlN is [0001](AlN)//[111](MnO) and [11-20](AlN)//[1-10](MnO), which minimizes the lattice mismatch (0.8%). We have also found that the heterointerface for AlN/MnO is less abrupt than that for AlN/Al2O3 due to the chemical vulnerability of MnO. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：215 / 217

页数：3

共 14 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2]

[Anonymous], 1979, J PHYS EARTH, DOI DOI 10.4294/JPE1952.27.63

[3] High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer [J].

Fong, WK ;

Zhu, CF ;

Leung, BH ;

Surya, C .

JOURNAL OF CRYSTAL GROWTH, 2001, 233 (03) :431-438

[4] Epitaxial growth of semiconductors on SrTiO3 substrates [J].

Fujioka, H ;

Ohta, J ;

Katada, H ;

Ikeda, T ;

Noguchi, Y ;

Oshima, M .

JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) :137-141

[5] Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy [J].

Heying, B ;

Smorchkova, I ;

Poblenz, C ;

Elsass, C ;

Fini, P ;

Den Baars, S ;

Mishra, U ;

Speck, JS .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2885-2887

[6] First laser diodes fabricated from III-V nitride based materials [J].

Nakamura, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3) :258-264

[7] HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S .

APPLIED PHYSICS LETTERS, 1995, 67 (13) :1868-1870

[8] CAICISS characterization of GaN films grown by pulsed laser deposition [J].

Ohta, J ;

Fujioka, H ;

Furusawa, M ;

Sasaki, A ;

Yoshimoto, M ;

Koinuma, H ;

Sumiya, M ;

Oshima, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :1153-1157

[9] Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE [J].

Ohta, J ;

Fujioka, H ;

Sumiya, M ;

Koinuma, H ;

Oshima, M .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (01) :73-78

[10]

OHTA J, IN PRESS J CRYST GRO

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