Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography

被引：109

作者：

Ishikawa, T ^{[1
]}

Nishimura, T ^{[1
]}

Kohmoto, S ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Associat FESTA, Tsukuba, Ibaraki 3002635, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 02期

关键词：

D O I：

10.1063/1.125691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl-2 gas etching, QDs were selectively formed, without any formation on the flat region between the patterned holes. The density of the QDs in each hole was dependent on the hole depth, indicating that atomic steps on the GaAs surfaces act as migration barriers to In adatoms. In an array of holes including 5-6 monolayer steps, a single QD was arranged in each hole. (C) 2000 American Institute of Physics. [S0003-6951(00)01602-8].

引用

页码：167 / 169

页数：3

共 12 条

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B) :528-530

[12] A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates [J].

Nishi, K ;

Saito, H ;

Sugou, S ;

Lee, JS .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1111-1113

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