Rotational-disordering phase transition of C-60(111) epitaxial films grown on GeS(001)

被引：10

作者：

Glebov, A ^{[1
]}

Senz, V ^{[1
]}

Toennies, JP ^{[1
]}

Gensterblum, G ^{[1
]}

机构：

[1] FAC UNIV NOTRE DAME PAIX,INST STUDIES INTERFACE SCI,B-5000 NAMUR,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.366041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface structures of C-60 films, epitaxially grown on the GeS(001) surface, were investigated from 90 to 350 K by helium atom scattering (HAS) diffraction. The present HAS results indicate a step-flow growth mode that is consistent with the results of previous x-ray scattering studies. By monitoring the diffraction intensities, the orientational-disordering phase transition is found to be completed at T-c=235 K, which is about 25 K lower than the bulk transition temperature. This surface phase transition appears to be preempted by rotational disordering of C-60 molecules at defect sites, already initiated at T-s=130 K. (C) 1997 American Institute of Physics.

引用

页码：2329 / 2333

页数：5

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