Ferroelectric memory based secure dynamically programmable gate array

被引:7
作者
Masui, S [1 ]
Ninomiya, T [1 ]
Oura, M [1 ]
Yokozeki, W [1 ]
Mukaida, K [1 ]
Kawashima, S [1 ]
机构
[1] Fujitsu Ltd, Fujitsu Labs Ltd, Akiruno, Tolyo 1970833, Japan
来源
2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2002年
关键词
D O I
10.1109/VLSIC.2002.1015083
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A nonvolatile ferroelectric SRAM based 8-context dynamically programmable gate array enables low-cost field programmable systems by the elimination of off-chip nonvolatile memories. Read and program procedures of the associated configuration memory are securely protected, so that unauthorized users cannot access to configuration data. The ferroelectric SRAM configuration memory features 2nsec nondestructive read operations along with stable data recall. The logic block circuit is optimized to improve available logic gates for multi-context scheme.
引用
收藏
页码:200 / 203
页数:4
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