Laser production and deposition of light-emitting silicon nanoparticles

被引:37
作者
Huisken, F
Hofmeister, H
Kohn, B
Laguna, MA
Paillard, V
机构
[1] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[3] Univ Toulouse 3, Phys Solides Lab, F-31062 Toulouse, France
关键词
laser pyrolysis; nanoparticles; TOF mass spectrometry; electron microscopy; photoluminescence; structuration;
D O I
10.1016/S0169-4332(99)00476-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silicon clusters and nanoparticles are produced by CO2-laser-induced decomposition of silane in a flow reactor. In contrast to conventional techniques, the particles are expanded, directly after production, through a conical nozzle into a high vacuum chamber and then transferred into a molecular beam apparatus where they an analyzed in situ by time-of-flight mass spectrometry (TOF-MS). The analysis reveals that the flow reactor emits, besides small clusters, also high-purity silicon crystallites with diameters between 2 and 20 nm. It is found that the particles' velocity strongly correlates with their mass. This feature and the fact that the particles are produced in the pulsed mode enable us, by introducing a chopper into the cluster beam, to considerably reduce the dispersion of their size distribution and to perform size-selected low-energy cluster deposition on various substrates. High-resolution electron transmission micrographs demonstrate the capabilities of the new apparatus and reveal interesting details of the crystalline structure of silicon nanoparticles as a function of their size. The monodispersed silicon films have been further characterized by studying their luminescence and Raman scattering behavior. As predicted by theoretical models, the peak of the luminescence curve shifts with decreasing particle size to smaller wavelengths (higher energies). Structured thin films are obtained by shaping the duster beam with a mask and depositing the nanocrystals at low energy on a sapphire substrate. Upon illumination with ultraviolet radiation, the structured film exhibits strong photoluminescence (PL) in the red. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:305 / 313
页数:9
相关论文
共 18 条
[1]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[4]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036
[5]   LASER-DRIVEN FLOW REACTOR AS A CLUSTER BEAM SOURCE [J].
EHBRECHT, M ;
FERKEL, H ;
SMIRNOV, VV ;
STELMAKH, OM ;
ZHANG, W ;
HUISKEN, F .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (07) :3833-3837
[6]   Gas-phase characterization of silicon nanoclusters produced by laser pyrolysis of silane [J].
Ehbrecht, M ;
Huisken, F .
PHYSICAL REVIEW B, 1999, 59 (04) :2975-2985
[7]   Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition [J].
Ehbrecht, M ;
Kohn, B ;
Huisken, F ;
Laguna, MA ;
Paillard, V .
PHYSICAL REVIEW B, 1997, 56 (11) :6958-6964
[8]  
Ehbrecht M, 1997, Z PHYS D ATOM MOL CL, V40, P88, DOI 10.1007/s004600050165
[9]  
HAGGERTY JS, 1981, LASER INDUCED CHEM P, P165
[10]   SEMICONDUCTOR CLUSTER BEAMS - ONE AND 2 COLOR IONIZATION STUDIES OF SIX AND GEX [J].
HEATH, JR ;
LIU, Y ;
OBRIEN, SC ;
ZHANG, QL ;
CURL, RF ;
TITTEL, FK ;
SMALLEY, RE .
JOURNAL OF CHEMICAL PHYSICS, 1985, 83 (11) :5520-5526