Calculation of gain and noise with dead space for GaAs and AlxGa1-xAs avalanche photodiode

被引：27

作者：

Li, XW ^{[1
]}

Zheng, XG ^{[1
]}

Wang, SL ^{[1
]}

Ma, F ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78758 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 07期

关键词：

avalanche multiplication; avalanche photodiodes; dead-space effect; excess noise factor; gain distribution; impact ionization; ionization coefficient;

D O I：

10.1109/TED.2002.1013264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, the multiplication noise, and gain distribution curves. The results are compared with simple Monte Carlo simulation and the Z-transform technique.

引用

页码：1112 / 1117

页数：6

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