LUCKY DRIFT ESTIMATION OF EXCESS NOISE FACTOR FOR CONVENTIONAL AVALANCHE PHOTODIODES INCLUDING THE DEAD SPACE EFFECT

被引:45
作者
MARSLAND, JS [1 ]
WOODS, RC [1 ]
BROWNHILL, CA [1 ]
机构
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
关键词
D O I
10.1109/16.129093
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new technique for estimating the excess noise factor in conventional avalanche photodiodes has been developed. It is based upon a computer simulation of carrier motion using lucky drift concepts. The importance of the impact ionization dead space is demonstrated and an established theory is shown to overestimate the excess noise factor due to the neglect of the dead space phenomenon in conventional avalanche photodiodes.
引用
收藏
页码:1129 / 1135
页数:7
相关论文
共 19 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]   AN ALTERNATIVE EXPRESSION FOR THE IMPACT IONIZATION COEFFICIENT IN A SEMICONDUCTOR DERIVED USING LUCKY DRIFT THEORY [J].
BURT, MG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :L477-L481
[3]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390
[4]   SIMULATIONS OF ELECTRON-IMPACT IONIZATION RATE IN GAAS IN NONUNIFORM ELECTRIC-FIELDS [J].
KIM, K ;
HESS, K .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2626-2629
[5]   A NON-MARKOVIAN MODEL OF AVALANCHE GAIN STATISTICS FOR A SOLID-STATE PHOTOMULTIPLIER [J].
LAVIOLETTE, RA ;
STAPELBROEK, MG .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) :830-836
[6]   INVESTIGATION OF TRANSITION FROM TUNNELING TO IMPACT IONIZATION MULTIPLICATION IN SILICON P-N-JUNCTIONS [J].
LUKASZEK, WA ;
VANDERZIEL, A ;
CHENETTE, ER .
SOLID-STATE ELECTRONICS, 1976, 19 (01) :57-71
[7]   ON THE EFFECT OF IONIZATION DEAD SPACES ON AVALANCHE MULTIPLICATION AND NOISE FOR UNIFORM ELECTRIC-FIELDS [J].
MARSLAND, JS .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1929-1933
[8]   POWER-SERIES APPROXIMATION USED IN SOFT THRESHOLD LUCKY DRIFT MODEL OF IMPACT IONIZATION [J].
MARSLAND, JS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (02) :177-182
[10]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+