High-temperature non-eutectic indium-tin joints fabricated by a fluxless process

被引:25
作者
Chuang, RW [1 ]
Lee, CC [1 ]
机构
[1] Univ Calif Irvine, Irvine, CA 92697 USA
基金
美国国家航空航天局;
关键词
non-eutectic solders; indium; tin; fluxless bonding;
D O I
10.1016/S0040-6090(02)00424-8
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
A new alternative solder joint made of a non-eutectic indium-tin (In-Sn) multilayer composite deposited in high vacuum is reported. The unique features of this design are that it is fluxless, oxidation-free, and more importantly the fabricated joint achieves a re-melting temperature significantly higher than the bonding temperature. The In-Sn non-eutectic multilayer structure with a thin gold film evaporated as a cap layer has a predominantly Sn-rich matrix with a composition of 6 wt.% An, 14 wt.% In and 80 wt.% Sn. The quality of the joints was first evaluated using a combination of X-ray microfocus and scanning acoustic microscopy techniques, and results have shown that the joints are nearly void-free. In addition, analysis by scanning electron microscopy (SEM) equipped with an energy-dispersive X-ray (EDX) spectroscope performed on the joint cross-section clearly indicated a uniform joint thickness of 7.6 mum, while AuIn2, grains embedded in a heavily Sn-rich matrix were clearly detected. Lastly, we set out to determine the re-melting temperatures of these fabricated joints. Temperature values ranging from 175 to 190 degreesC were found, higher than the bonding temperature of 150 degreesC. The results clearly show that the joint composition is heavily Sn-rich, leading to the high re-melting temperature The increase in re-melting temperature opens up the post-processing temperature window of devices in manufacturing processes. No flux is needed during the bonding process, making it particularly useful to packaging devices for which the use of flux is strictly prohibited. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:175 / 179
页数:5
相关论文
共 10 条
[1]
LOW-TEMPERATURE INTERDIFFUSION IN AU/IN THIN-FILM COUPLES [J].
BJONTEGAARD, J ;
BUENE, L ;
FINSTAD, T ;
LONSJO, O ;
OLSEN, T .
THIN SOLID FILMS, 1983, 101 (03) :253-262
[2]
A fluxless bonding technology using indium-silver multilayer composites [J].
Chen, YC ;
So, WW ;
Lee, CC .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1997, 20 (01) :46-51
[3]
Indium-copper multilayer composites for fluxless oxidation-free bonding [J].
Chen, YC ;
Lee, CC .
THIN SOLID FILMS, 1996, 283 (1-2) :243-246
[4]
Low temperature fluxless bonding technique using In-Sn composite [J].
Choe, S ;
So, WX ;
Lee, CC .
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, 2000, :114-118
[5]
A NEW BONDING TECHNOLOGY USING GOLD AND TIN MULTILAYER COMPOSITE STRUCTURES [J].
LEE, CC ;
WANG, CY ;
MATIJASEVIC, GS .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1991, 14 (02) :407-412
[6]
LEE CC, 1993, J ELECTRON PACKAGING, V115, P201
[7]
Okamoto H., 1990, BINARY ALLOY PHASE D, V3, P2295
[8]
OKAMOTO H, 1990, BINARY ALLOY PHASE D, V3, P381
[9]
POWELL GW, 1964, T METALL SOC AIME, V230, P694
[10]
THIN-FILM INTERDIFFUSION OF AU AND IN AT ROOM-TEMPERATURE [J].
SIMIC, V ;
MARINKOVIC, Z .
THIN SOLID FILMS, 1977, 41 (01) :57-61