Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection

被引:39
作者
Borri, P
Langbein, W
Hvam, JM
Heinrichsdorff, F
Mao, MH
Bimberg, D
机构
[1] Tech Univ Denmark, Com, Res Ctr, DK-2200 Copenhagen, Denmark
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
All Open Access; Bronze; Green;
D O I
10.1063/1.126038
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state. (C) 2000 American Institute of Physics. [S0003-6951(00)02211-7].
引用
收藏
页码:1380 / 1382
页数:3
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