Electron trapping variations in single-crystal pixelated HgI2 gamma-ray spectrometers

被引：8

作者：

Baciak, JE ^{[1
]}

He, Z

DeVito, RP

机构：

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

[2] Constellat Technol Corp, Largo, FL 33777 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 03期

关键词：

Electron transport properties - Electron traps - Estimation - Mercury compounds - Semiconductor materials - Single crystals;

D O I：

10.1109/TNS.2002.1039649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of thick (similar to6 mm) HgI2 room-temperature gamma-ray detectors having 4 small pixel anodes are investigated. Spectra for the different anodes (overall and for individual interaction depths) are presented. The mu-tau product for electrons was measured to study the variations of electron transport within a single HgI2 crystal. By using the single polarity charge sensing with depth sensing, the mu(e)tau(e) was estimated to vary from similar to9 x 10(-4) cm(2)/V to 7 x 10(-3) cm(2)/V. Individual pixels have the ability to produce spectra with resolutions less than 3% at 662 keV Some effects of electron detrapping and hole transport are also discussed.

引用

页码：1264 / 1269

页数：6

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