High-performance injectorless quantum cascade lasers emitting below 6 μm

被引：17

作者：

Katz, Simeon ^{[1
]}

Vizbaras, Augustinas ^{[1
]}

Boehm, Gerhard ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 15期

关键词：

aluminium compounds; gallium arsenide; III-V semiconductors; indium compounds; laser beams; laser variables measurement; quantum cascade lasers;

D O I：

10.1063/1.3119184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An injectorless quantum cascade laser emitting around 5.7 mu m with more than 1 W of output power and a wall-plug efficiency of 3.6% at room temperature in pulsed operation is presented. The active region of the device is a design that picked up the idea of the four-alloy structure, which has already lead to very low threshold current densities. The pulsed threshold current densities were measured as low as 1.1 kA/cm(2) at room temperature for an as-cleaved 3.6 mm long device, and 0.93 kA/cm(2) for a high-reflection-coated 4 mm long device.

引用

页数：2

共 6 条

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