Low-cost low actuation voltage copper RE MEMS switches

被引：45

作者：

Balaraman, D ^{[1
]}

Bhattacharya, SK ^{[1
]}

Ayazi, F ^{[1
]}

Papapolymerou, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication and testing of capacitive copper RF MEMS switches with various hinge geometries, fabricated on high-resistivity silicon substrate. The switches were fabricated using a simple low-cost four-mask process and 0.6-1.0mum thick membranes were made out of sputtered copper. The capacitive airgap in between the membrane and the signal line is 1.5-2.0mum. The lowest actuation voltage measured on the fabricated switches is 9V. The measured insertion loss of a fabricated switch and its associated transmission line was 0.9dB (mainly contributed by the transmission line Itself) and the isolation was measured to be 25dB at 40GHz.

引用

页码：1225 / 1228

页数：4