Photoelectrochemical properties of layered niobate (K4Nb6O17) films prepared by electrophoretic deposition

被引：30

作者：

Koinuma, M ^{[1
]}

Seki, H ^{[1
]}

Matsumoto, Y ^{[1
]}

机构：

[1] Kumamoto Univ, Fac Engn, Dept Appl Chem, Kumamoto 8608555, Japan

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 2002年 / 531卷 / 01期

关键词：

layered thin film; n-type semiconductor; electrophoretic deposition; niobate; photoelectrochemistry;

D O I：

10.1016/S0022-0728(02)01049-5

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Layered niobate oxide (K4Nb6O17.3H(2)O) films With high orientation and strong adhesion were fabricated by electrophoretic deposition. The deposited films displayed the behavior of a typical n-type semiconductor in K2SO4 solution. When the films were irradiated with UV light, an anodic photocurrent due to the oxidative reaction of the water between the NbO6 layers could be observed. Consequently, the deposited film was converted by photoelectrochemical oxidation from a hydrated form (K4Nb6O17.3H(2)O) into an anhydrous form (K4Nb6O17). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：81 / 85

页数：5

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