Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen

被引：125

作者：

Guisinger, Nathan P. ^{[1
]}

Rutter, Gregory M. ^{[2
]}

Crain, Jason N. ^{[1
]}

First, Phillip. N. ^{[2
]}

Stroscio, Joseph A. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

关键词：

ELECTRONIC-STRUCTURE; BILAYER GRAPHENE; DANGLING BONDS; SURFACE; PASSIVATION; TEMPERATURE; SCATTERING; GRAPHITE; DEVICES; GAS;

D O I：

10.1021/nl803331q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.

引用

页码：1462 / 1466

页数：5

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