The effect of the violation of Vegard's law on the optical bowing in Si1-xGex alloys

被引:22
作者
Charifi, Z [1 ]
Bouarissa, N [1 ]
机构
[1] UNIV SETIF,DEPT PHYS,SETIF 19000,ALGERIA
关键词
D O I
10.1016/S0375-9601(97)00575-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of the deviation of the lattice parameters from Vegard's rule on the optical bowing of the fundamental gap in Si1-xGex semiconductor alloys is discussed. Our computations are based on the pseudopotential method. To make allowance for the chemical disorder, the virtual-crystal approximation is used, including a correction to the alloy potential. Our results show that the bowing parameter is highly improved when the lattice relaxation effect is included which indicates the importance of the lattice mismatch in the electronic band structure calculations of IV-IV semiconductor alloys. (C) Published by Elsevier Science B.V.
引用
收藏
页码:493 / 497
页数:5
相关论文
共 26 条
[1]  
BASSANI F, 1975, ELECTRONIC STATES OP
[2]  
BATSON PE, 1991, APPL PHYS LETT, V58, P3285
[3]   OPTICAL BOWING IN ZINC CHALCOGENIDE SEMICONDUCTOR ALLOYS [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1986, 34 (08) :5992-5995
[4]   ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X [J].
BOUARISSA, N ;
AMRANE, N ;
AOURAG, H .
INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (04) :755-761
[5]   INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].
BRAUNSTEIN, R ;
MOORE, AR ;
HERMAN, F .
PHYSICAL REVIEW, 1958, 109 (03) :695-710
[6]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[7]   STRUCTURE AND THERMODYNAMICS OF SIXGE1-X ALLOYS FROM ABINITIO MONTE-CARLO SIMULATIONS [J].
DEGIRONCOLI, S ;
GIANNOZZI, P ;
BARONI, S .
PHYSICAL REVIEW LETTERS, 1991, 66 (16) :2116-2119
[8]   LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].
DISMUKES, JP ;
PAFF, RJ ;
EKSTROM, L .
JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&
[9]   ANALYSIS OF THIN-FILM SOLID-SOLUTIONS ON SINGLE-CRYSTAL SILICON BY SIMULATION OF X-RAY ROCKING CURVES - B-SI AND GE-SI BINARY-ALLOYS [J].
FABBRI, R ;
CEMBALI, F ;
SERVIDORI, M ;
ZANI, A .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2359-2369
[10]   VIOLATION OF VEGARDS LAW IN COVALENT SEMICONDUCTOR ALLOYS [J].
FONG, CY ;
WEBER, W ;
PHILLIPS, JC .
PHYSICAL REVIEW B, 1976, 14 (12) :5387-5391