Improved film growth and hatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-Si gates using chemical oxides and optimized post-annealing

被引：78

作者：

Wilk, GD ^{[1
]}

Green, ML ^{[1
]}

Ho, MY ^{[1
]}

Busch, BW ^{[1
]}

Sorsch, TW ^{[1
]}

Klemens, FP ^{[1
]}

Brijs, B ^{[1
]}

van Dover, RB ^{[1
]}

Kornblit, A ^{[1
]}

Gustafsson, T ^{[1
]}

Garfunkel, E ^{[1
]}

Hillenius, S ^{[1
]}

Monroe, D ^{[1
]}

Kalavade, P ^{[1
]}

Hergenrother, JM ^{[1
]}

机构：

[1] Agere Syst, Murray Hill, NJ USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate for the first little that chemical oxide underlayers similar to5Angstrom thick provide improved growth and flatband voltage control of ALD HfO2 films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-kappa stacks. Extremely small flatband voltage shifts of < 30 mV are achieved, corresponding to a very low fixed charge of Q(f) similar to 2E11/cm(2).

引用

页码：88 / 89

页数：2

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