Stranski-Krastanow growth of GaN quantum dots by metalorganic chemical vapor deposition

被引：17

作者：

Miyamura, M

Tachibana, K

Someya, T

Arakawa, Y

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538904, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

基金：

日本学术振兴会;

关键词：

low dimensional structures; nanostructures; metalorganic chemical vapor deposition; nitrides;

D O I：

10.1016/S0022-0248(01)02058-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have successfully grown GaN self-assembled quantum dots (QDs) on an AlN layer by low-pressure metalorganic chemical vapor deposition. The average diameter and height of the QDs were 35 and 1.6 nm, respectively. The density of GaN QDs was around 6 x 10(8) cm(-2) when the amount of GaN deposited was 2.5 mono-layer (ML). The dependence of the QD density on the GaN coverage was investigated. The coverage when GaN QDs are formed is estimated to be 1.0 ML. The formation of the QDs was much affected by the growth temperature, and its behavior was same as other QDs grown by the Stranski-Krastanow mode. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：1316 / 1319

页数：4

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