A novel method for preparing stoichiometric SnO2 thin films at low temperature

被引：22

作者：

Ansari, S. G. ^{[1
,3
]}

Dar, M. A. ^{[1
]}

Dhage, M. S. ^{[1
]}

Kim, Young Soon ^{[1
]}

Ansari, Z. A. ^{[2
]}

Al-Hajry, A. ^{[3
]}

Shin, Hyung-Shik ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn, Jeonju 561756, Jeonbuk, South Korea

[2] Jamia Millia Islamia, Ctr Interdisciplinary Res Basic Sci, New Delhi 110025, India

[3] Najran Univ, Dept Phys, Najran, Saudi Arabia

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2009年 / 80卷 / 04期

关键词：

plasma CVD; Raman spectra; semiconductor thin films; stoichiometry; tin compounds; X-ray diffraction; X-ray photoelectron spectra; SURFACE; SIZE;

D O I：

10.1063/1.3115222

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Tin oxide is a well known nonstoichiometric material with dual valency. The invariance of stoichiometry is very intriguing. As of today no report is available for preparing perfect stoichiometric tin oxide. Here we report a novel method to prepare stoichiometric tin oxide by modifying the known plasma enhanced chemical vapor deposition technique using SnCl4-xH(2)O as precursor and O-2 as reactant gas at various temperatures from 300 to 800 degrees C. Tetragonal rutile structure of SnO2 was found, grown along the [110] direction. X-ray photoelectron spectroscopic measurement showed constant Sn/O ratio. Sn 3d and O 1s were found composed of only Sn4+ (487.2 eV) and O-Sn4+ (531.2 eV) with equal peak widths. Raman band intensity (similar to 633 cm(-1)) was found increasing with temperature, indicating the morphological changes. Sheet resistance of similar to 0.5 k Omega/square at 300 degrees C was measured that reduces to similar to 0.1 k Omega/square at 600 degrees C. It is found that film stoichiometry remains unaltered, while the structural morphology changes significantly.

引用

页数：6

共 19 条

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