Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors:: The role of grain boundaries

被引：126

作者：

Someya, T ^{[1
]}

Katz, HE

Gelperin, A

Lovinger, AJ

Dodabalapur, A

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1514826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the channel-length dependence of responses to a vapor analyte with a series of alpha,omega-dihexylquarterthiophene (DHalpha4T) field-effect transistors (FETs). Single-crystalline DHalpha4T devices deposited by vacuum sublimation at substrate temperatures of 70 degreesC are compared with polycrystalline DHalpha4T films deposited at room temperature. By changing the length of FET channels and/or the size of polymer grains, the number of grain boundaries per device is changed systematically. A larger response to vapor analyte is obtained by increasing the number of grain boundaries per device, showing that vapor sensing occurs mainly at grain boundaries. (C) 2002 American Institute of Physics.

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页码：3079 / 3081

页数：3

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