Microwave noise performance of AlGaN/GaN HEMTs

被引：37

作者：

Ping, AT ^{[1
]}

Piner, E

Redwing, J

Khan, MA

Adesida, I

机构：

[1] TriQuint Semicond, Hillsboro, OR 97124 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] ATMI Epitron, Phoenix, AZ 85027 USA

[5] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 02期

关键词：

D O I：

10.1049/el:20000152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have characterised the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating BC substrates. The minimum noise figure for 0.25 mu m gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

引用

页码：175 / 176

页数：2

共 8 条

[1]

Adesida I., 1998, GAAS 98. Conference Proceedings, P193

[2]

HOSOGI K, 1990, IEEE MTT S, P1257

[3]

Kawasaki H., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P423, DOI 10.1109/MWSYM.1989.38756

[4] Low-frequency noise in AlGaN/GaN heterostructure field effect transistors [J].