Hole injection and transport in ITO/PEDOT/PVK/Al diodes

被引：48

作者：

Ben Khalifa, M

Vaufrey, D

Bouazizi, A

Tardy, J

Maaref, H

机构：

[1] Ecole Cent Lyon, Lab Elect Optoelect & Microsyst, Unite 5512, CNRS, F-69131 Ecully, France

[2] Fac Sci Monastir, Lab Phys Interfaces, Monastir 5000, Tunisia

[3] Fac Sci Monastir, Lab Phys Semicond, Monastir 5000, Tunisia

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 21卷 / 1-2期

关键词：

organic light-emitting diodes; space charge limited conduction; charge carrier mobility; bulk limited current;

D O I：

10.1016/S0928-4931(02)00080-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper reports on the hole injection in Poly(N-vinylcarbazole) (PVK) films from an indium tin oxide (ITO) anode treated with poly(3,4)ethylenedioxythiophene/polystyrenesulphonate (PEDT/PSS) usually called PEDOT. The influence of the deposition conditions of PEDOT on the onset voltage of the diodes is first, investigated and an optimised procedure for the surface treatment of ITO with PEDOT is given. Second, the analysis of the I-V characteristics of various devices with different PVK thickness in a temperature range 100-330 K shows that the hole conduction is bulk limited rather than injection limited. A trap assisted space charge conduction model with an exponential distribution of traps well describes our results. A trap density of 4x10(18) cm(-3) and a characteristic energy E-t-E-HOMO=0.15 eV were deduced. A comparison with a conduction model based on trap free material but with electric field dependant mobility is provided. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 282

页数：6

共 18 条

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