Magnetization process and domains in MTJ

被引：4

作者：

Czapkiewicz, M

Zoladz, M

Wrona, J

Wisniowski, P

Rak, R

Stobiecki, T

Kim, CG

Kim, CO

Takahashi, M

Tsunoda, M

机构：

[1] AGH Univ Sci & Technol, Dept Elect, PL-30059 Krakow, Poland

[2] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

[3] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 07期

关键词：

D O I：

10.1002/pssb.200304668

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The magnetization process and domain structure of free layers in as deposited and annealed magnetic tunnel junctions (MTJ) of Si/Ta/Cu/Ta/NiFe/Cu/IrMn(10)/CoFe(2.5)/Al-0(1.5)/CoFe(2.5)/NiFe(t)/Ta, where t = 10, 30 and 100 nm, were investigated by Kerr microscopy, R-VSM and MOKE magnetometers. Different types of domain patterns observed in free layers (CoFe(2.5)/NiFe(t)) depending on the mutual relation between interlayer coupling energy and free layer magnetostatic energy. For as deposited samples fuzzy domains with fine irregular "patches" pattern, typical for weak interlayer coupling, are observed. Annealed MTJs, however, are characterized by large domains superimposed by crossed stripes, which led to the blocking of coherent rotation of magnetization. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1477 / 1481

页数：5

共 12 条

[1]

CZAPKIEWICZ M, 1999, THESIS AGH U SCI TEC

[2]

Hubert A., 1998, MAGNETIC DOMAINS ANA

[3] Magnetization reversal and interlayer coupling in magnetic tunneling junctions [J].