Electron field emission from defective diamond films deposited on chrome electrode

被引:7
作者
Park, KH
Lee, S
Koh, KH
机构
[1] Ajou Univ, Dept Mol Sci & Technol, Paldal Ku, Suwon 442749, South Korea
[2] Ajou Univ, Dept Phys, Paldal Ku, Suwon 442749, South Korea
关键词
field emission; defective diamond; emission barrier; sp(2)-bonded carbon;
D O I
10.1016/S0925-9635(00)00253-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Deposition of the good electron-emitting diamond films on a chrome electrode, which is essential for the development of the actual display device, was successfully carried out. Emission current densities of 1 mu A/cm(2) and 1 mA/cm(2) were measured at the electric field of 6.6 and 12.3 V/mu m, respectively. The emission images revealed that the emission site density was similar to 10(4) sites/cm(2). Both Raman spectroscopy and scanning electron microscopy showed that these were defective diamond films, similar to those deposited on silicon substrates under similar deposition conditions. Comparing the emission characteristics of the films deposited on silicon and on chrome, we conclude that the interface between the back contact and the film is not the current-limiting factor. Moreover, we discuss the importance of the inclusion of sp(2)-bonded carbons fur good electron emission. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1342 / 1348
页数:7
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