Photoluminescence from transmuted impurities in neutron-transmutation-doped semi-insulating GaP

被引：6

作者：

Kuriyama, K ^{[1
]}

Ohbora, K

Okada, M

机构：

[1] Hosei Univ, Coll Engn, Koganei, Tokyo 1848584, Japan

[2] Hosei Univ, Res Ctr Ion Beam Technol, Koganei, Tokyo 1848584, Japan

[3] Kyoto Univ, Inst Res Reactor, Osaka 5400494, Japan

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 113卷 / 07期

关键词：

semiconductors; impurities in semiconductors; electronic states (localized); radiation effects; luminescence;

D O I：

10.1016/S0038-1098(99)00499-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transmuted impurities Ge and S in neutron-transmutation-doped (NTD) semi-insulating GaP were studied by a photoluminescence method. A broad emission was observed at 1.65 eV accompanied by a hump at similar to 1.87 eV in samples annealed above 640 degrees C. These emissions are attributed to Ge-Ga-Ge-p complex and S donor-Ge acceptor pair recombination, respectively, indicating the presence of the transmuted impurities. The formation of the complex defect was examined using a configuration coordinate model. The presence of the complex defects restricted the electrical activation of the transmuted impurities in NTD-GaP, forming a localized state. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：415 / 418

页数：4

共 24 条

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