Oxygen-related intrinsic defects in glassy SiO2:: Interstitial ozone molecules

被引：51

作者：

Skuja, L ^{[1
]}

Hirano, M

Hosono, H

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Japan Sci & Technol Corp, ERATO,KSP, Hosono Transparent Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[3] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.84.302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Interstitial O-3 molecules in 7.9 eV photon-irradiated silica are identified. Their optical absorption band at 4.8 eV nearly coincides with the 4.8 eV band of nonbridging oxygen hole centers, The O-3-related band is distinguished by a smaller halfwidth (0.84 vs 1.05 eV), by susceptibility to ultraviolet bleaching, by lack of correlation to the 1.9 eV luminescence band, and by rise of a singlet O-2 luminescence band at 0.974 eV during photobleaching. This identification solves a long controversy on the nature of optical bands in silica and gives a tool for studying the mobility of atomic oxygen in SiO2.

引用

页码：302 / 305

页数：4

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